? 2015 ixys corporation, all rights reserved v ces = 650v i c110 = 20a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.10v t fi(typ) = 87ns ds100645(02/15) extreme light punch through igbt for 5-30khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 10 ? a t j = 150 ? c 400 ? a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 20a, v ge = 15v, note 1 1.77 2.10 v t j = 150 ? c 2.05 v advance technical information symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 58 a i c110 t c = 110c 20 a i f110 t c = 110c 23 a i cm t c = 25c, 1ms 108 a i a t c = 25c 10 a e as t c = 25c 200 mj ssoa v ge = 15v, t vj = 150c, r g = 20 ? i cm = 40 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 5 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 230 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 3.0 g xpt tm 650v igbt genx3 tm w/diode IXYP20N65B3D1 g = gate c = collector e = emitter tab = collector g c e to-220 tab features ? optimized for 5-30khz switching ? square rbsoa ? avalanche rated ? anti-parallel fast diode ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. IXYP20N65B3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 8.5 14 s c ie s 826 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 82 pf c res 19 pf q g(on) 29 nc q ge i c = 20a, v ge = 15v, v ce = 0.5 ? v ces 6 nc q gc 14 nc t d(on) 12 ns t ri 25 ns e on 0.50 mj t d(off) 103 ns t fi 87 ns e of f 0.45 0.70 mj t d(on) 13 ns t ri 26 ns e on 0.93 mj t d(off) 124 ns t fi 147 ns e off 0.76 mj r thjc 0.65 c/w r thcs 0.50 c/w inductive load, t j = 25c i c = 20a, v ge = 15v v ce = 400v, r g = 20 ? note 2 inductive load, t j = 150c i c = 20a, v ge = 15v v ce = 400v, r g = 20 ? note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v f i f = 20a, v ge = 0v, note 1 2.5 v t j = 150 ? c 1.2 v i rm 11 a t rr 134 ns r thjc 1.85 c/w i f = 20a, v ge = 0v, -di f /dt = 300a/ s, v r = 400v, t j = 150c pins: 1 - gate 2 - collector 3 - emitter to-220 outline
? 2015 ixys corporation, all rights reserved IXYP20N65B3D1 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 7v 9v 8v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 8v 9v 11v 13v 12v 14v 10v 7v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 9v 6v 8v 10v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 20a i c = 10a i c = 40a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 40a t j = 25oc 20a 10a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 45 45678910 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYP20N65B3D1 fig. 7. transconductance 0 4 8 12 16 20 24 0 5 10 15 20 25 30 35 40 45 50 55 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc v ce = 10v fig. 10. reverse-bias safe operating area 0 10 20 30 40 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 20 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 q g - nanocoulombs v ge - volts v ce = 325v i c = 20a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limi t 100s dc fig. 12. maximum transient thermal impedance (igbt) 0.01 0.1 1 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 pulse width - second z (th)jc - oc / w d = t p / t t p t d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse
? 2015 ixys corporation, all rights reserved IXYP20N65B3D1 fig. 13. inductive switching energy loss vs. gate resistance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 20 30 40 50 60 70 80 90 100 r g - ohms e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 20a i c = 40a fig. 16. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 200 20 30 40 50 60 70 80 90 100 r g - ohms t f i - nanoseconds 0 60 120 180 240 300 360 420 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 20a i c = 40a fig. 14. inductive switching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 15 20 25 30 35 40 i c - amperes e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 20a i c = 40a fig. 17. inductive turn-off switching times vs. collector current 0 40 80 120 160 200 240 10 15 20 25 30 35 40 i c - amperes t f i - nanosecond s 30 60 90 120 150 180 210 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 80 90 100 110 120 130 140 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 20a i c = 40a
ixys reserves the right to change limits, test conditions, and dimensions. IXYP20N65B3D1 ixys ref: ixy_20n65b3d1(3d-y42) 02-05-2015 fig. 20. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 10 15 20 25 30 35 40 i c - amperes t r i - nanosecond s 10 11 12 13 14 15 16 17 t d(on) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 10 11 12 13 14 15 16 17 18 t d(on) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 40a i c = 20a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 20 30 40 50 60 70 80 90 100 r g - ohms t r i - nanosecond s 0 10 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 40a i c = 20a
? 2015 ixys corporation, all rights reserved IXYP20N65B3D1 fig. 13. maximum transient thermal impedance 0.01 0.1 1 10 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 pulse width - second z (th)jc - oc / w fig. 27. maximum transient thermal impedance (diode) aaaaa 4 d = t p / t t p t d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse fig. 26. dynamic parameters q rr, i rr vs. junction temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 20a -dif /dt = 300a/s fig. 22. diode forward characteristics 0 5 10 15 20 25 30 35 40 00.5 11.5 22.5 v f (v) i f (a) t j = 150oc t j = 25oc fig. 23. reverse recovery charge vs. -di f /dt 0.4 0.6 0.8 1.0 1.2 1.4 1.6 200 300 400 500 600 700 800 900 1000 1100 1200 -di f / dt (a/s) q rr (c) t j = 150oc v r = 400v i f = 30a 20a 10a fig. 24 reverse recovery current vs. -di f /dt 8 10 12 14 16 18 20 22 24 26 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 di f /dt (a/s) i rr (a) t j = 150oc v r = 400v i f = 40a 20a 10a fig. 25. reverse recovery time vs. -di f /dt 60 80 100 120 140 160 180 200 300 400 500 600 700 800 900 1000 1100 1200 -di f /dt (a/s) t rr (ns) t j = 150oc v r = 400v i f = 40a 20a 10a
|
